Last edited by Kijar
Sunday, July 12, 2020 | History

1 edition of Nanometer Variation-Tolerant SRAM found in the catalog.

Nanometer Variation-Tolerant SRAM

Circuits and Statistical Design for Yield

by Mohamed H. Abu-Rahma

  • 6 Want to read
  • 19 Currently reading

Published by Springer New York, Imprint: Springer in New York, NY .
Written in English

    Subjects:
  • Systems engineering,
  • Computer-Aided Engineering (CAD, CAE) and Design,
  • Engineering,
  • Computer-aided design,
  • Circuits and Systems

  • Edition Notes

    Statementby Mohamed H. Abu-Rahma, Mohab Anis
    ContributionsAnis, Mohab, SpringerLink (Online service)
    Classifications
    LC ClassificationsTK7888.4
    The Physical Object
    Format[electronic resource] :
    ID Numbers
    Open LibraryOL27076575M
    ISBN 109781461417491

    Nanometer Variation-Tolerant SRAM Statistical Design for Yield Circuits and Statistical Design for Yield Variability is one of the most challenging obstacles for IC design in the nanometer regime. In na-nometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by. A Novel variation-tolerant 9T SRAM design for nanoscale CMOS Sreeharsha Tavva Proposed 9T SRAM Cell in a 65 nm CMOS technology 32 static random access memory (SRAM) continues to play a pivotal role in all VLSI systems due to its superior speed and compatibility with the process technology. But as the technology.

      Variation Tolerant SRAM Cell for Low Power Applications, Static Random Access Memory (SRAM) is the important component across a wide range of microelectronics applications like high performance server processors, multimedia and System on Chip (SoC). The proposed 9T SRAM cell designed in nm Complementary Metal Oxide Semiconductor. Jeep Wrangler Service Shop Repair Manual Set 03 (factory service manual, chassis,transmission,body diagnostics procedures manuals.).

    These designs also have substantial area overhead when compared to the traditional 6T design. In this work, the published SRAM designs are characterized using commercial CMOS 65 nm models and are compared based on critical SRAM parameters like read stability, write stability, bitline leakage and the impact of process variations. This book focuses on circuit/architectural design techniques for achieving low power operation under parameter variations. We consider both logic and memory design aspects and cover modeling and analysis, as well as design methodology to achieve simultaneously low power and variation tolerance, while minimizing design overhead.


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Nanometer Variation-Tolerant SRAM by Mohamed H. Abu-Rahma Download PDF EPUB FB2

This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design.

It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer Cited by:   Buy Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield: Read Books Reviews - : Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield eBook: Abu Rahma, Mohamed, Anis, Mohab: Kindle Store1/5(1).

This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design.

It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density.

With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies. This bookis an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field Nanometer Variation-Tolerant SRAM book memory design.

It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer.

Nanometer Variation-Tolerant SRAM Circuits and Statistical Design for Yield By (author) Mohamed Abu Rahma, Mohab Anis. ISBN 13 Overall Rating (0 rating) Rental Duration: Price: 6 Months: $ Add to Cart: 1 Month: $ Add to Cart. Variability in nanometer technologies and impact on SRAM ; Variation-tolerant SRAM write and read assist techniques ; Reducing SRAM power using fine-grained wordline pulse width control ; A methodology for statistical estimation of read access yield in SRAMs ; Characterization of SRAM sense amplifier input offset for yield prediction.

This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design.

It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer 1/5(1). Abstract.

In this chapter, we give a short introduction on the importance of variation-tolerant SRAM design for the nanometer regime. In this paper, a new asymmetric 6T (AS6T) SRAM cell is presented in a standard nm CMOS technology employing separate bitline and wordline for read operation.

Utilizing separate bitline and wordline during read operation decouples the other cell node from the bitline, hence, enhancing the read static noise margin (SNM) by almost 2 times as compared to the conventional 6T SRAM. Nanometer variation-tolerant SRAM: Circuits and statistical design for yield. Book May with 53 Reads.

How we measure 'reads'. A 'read' is counted each time someone views a publication. This book focuses on circuit/architectural design techniques for achieving low power operation under parameter variations.

Coverage includes logic and memory design, modeling and analysis, as well as design methodology to achieve simultaneously low power and variation tolerance, while minimizing design overhead. A Scaling Trend of Variation-Tolerant SRAM Circuit Design in Deeper Nanometer Era Hiroyuki Yamauchi Abstract—Evaluation results about area scaling capa-bilities of various SRAM margin-assist techniques for random VT variability issues are described.

SRAM CMOS VLSI Design 4th Ed. 11 Thin Cell In nanometer CMOS – Avoid bends in polysilicon and diffusion – Orient all transistors in one direction Lithographically friendly or thin cell layout fixes this – Also reduces length and capacitance of bitlines.

Random variations in nanometer technologies are considered one of the largest design considerations. This is especially true for SRAM, due to the large variations in bitcell characteristics. Typically, SRAM bitcells have the smallest device sizes on a chip. Therefore, they show the largest sensitivity to different sources of variations.

Prospects for variation tolerant SRAM circuit designs Yamauchi, H. book ISBN:SRAM chips network synthesis wavelength 15 nm variation tolerant SRAM circuit designs cell topology multiple cell terminal biasing timing sequence controls SRAM.

Books in shopping cart: 0. Bhunia, Swarup Low-Power Variation-Tolerant Design in Nanometer Silicon. ,95€ Add to cart Nanometer Variation-Tolerant SRAM. Abu-Rahma, Mohamed H.

Random variations in nanometer technologies are considered one of the largest design considerations. This is especially true for SRAM, due to the large varia-tions in bitcell characteristics.

Typically, SRAM bitcells have the smallest device sizes on a chip. Therefore, they show the largest sensitivity to difierent sources of variations.

Low-Power Variation-Tolerant Design in Nanometer Silicon Edited by: Swarup Bhunia Saibal Mukhopadhyay Design considerations for low-power operations and robustness with respect to variations typically impose contradictory requirements.

This book focuses on circuit/architectural design techniques for achieving low power operation under. Nanometer Variation –Tolerant SRAM, Circuits and statistical Design for Yield, Springer () Google Scholar 9.

Attuluri R. Vijay Babu, Pantalingal Manoj Kumar, Gorantla Srinivasa Rao: Effect of Design and Operating Parameters on the Performance of Planar and Ducted Cathode Structures of an Air-Breathing PEM Fuel Cell, Arab J Sci Eng, 41(9.

Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield is the main resource of robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design.from book Nanometer variation-tolerant SRAM: Circuits and statistical design for yield (pp) Variation-Tolerant SRAM Write and Read Assist Techniques Chapter September with 96 Reads.Abstract—Evaluation results about area scaling capa-bilities of various SRAM margin-assist techniques for random VT variability issues are described.